DryScrub^®

DryScrub^® Performance Snapshot

TEOS Process in Verticle reactor, 200 mm wafers

TEOS System configured as Originally Specified

	0.20µm	0.23µm	1.00µm	1.50µm	Total
Top Tube	+33	+21	+3	+20	+77	Number of
Bottom Tube	+76	+2	+1	+4	+83	Particles

TEOS System Retrofitted and Operating with DryScrub^®  Plasma Scrubber

	0.20µm	0.23µm	1.00µm	1.50µm	Total
Top Tube	-2	+4	+1	+6	+9	Number of
Bottom Tube	-5	+6	+1	+3	+5	Particles

PECVD Nitride Application Monitoring DryScrub^® Performance Over Four (4) Months of Operation

95% brown powder (SiH4 by-product) reduction

White powder on the exhaust side:
<3 weeks maintenance cycle improved to >3 months.

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