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History of DryScrub, DRYSCRUB, ETC
To achieve today's desired process results, gas flows must be set high enough to ensure that a balance is achieved between film thickness, uniformity, and film stress, as a direct result, in excess of 80% of the total reactant gases flow through the process area 'unused'. This 'unused' gas is then available to form by-products and/or films in the downstream lines and equipment. These by-products can result in clogging of the lines or failure of the vacuum pumps with the consequent increase in maintenance requirements and lost production. Dr. Ray Chiu, from his experiences with Plasma Etching and PECVD Process development had the idea that, under the correct conditions, a plasma process chamber could react the process gasses almost through to depletion and if this chamber was placed just after the process chamber, it would prevent most of the by-products being formed in downstream lines and equipment, and the passage of some toxic gas into the environment. Early experiments proved successful and the end result was the DryScrub system. The first test of the prototype DryScrub system for a feasibility study was carried out at Genus Inc., a successful CVD equipment manufacturer, who were having problems in developing a new tungsten silicide CVD process. The issue with W-silicide was that the silane in the exhaust caused serious fire and maintenance hazards. The DryScrub prototype was nicknamed 'The Silane Eater' after it was found to efficiently convert the flammable silane into an amorphous silicon film deposited on the electrode, while the hydrogen gas passed through the exhaust system. The success of this study in 1987 proved the new application of the plasma surface reaction technology and led directly to a patent application, which was granted (US Patent 4735633, April 5, 1988). A pre-production model of the DryScrub
System 1D was sent to Intel Development Fab 1 (Aloha, As a result of the evaluation, Intel
ordered two systems that were installed on production equipment. Because of
the improvements the system offered, Intel worked with DryScrub, ETC to
develop the 2D model. The 1D model and the 2D model used the same type of
spiral electrode but the 2D offered easier maintenance of the DryScrub vacuum
chamber. The first production batch of five 2D Chambers were purchased and
installed in Intel fabs in In 1998, as a general push was made to develop equipment for 300mm wafers, a larger version of the 2D model, the 2DX2, was developed. It was basically a 2D Chamber and electrode 'stretched' to twice their normal length. This was needed to double the waste collection capacity to meet the need of higher gas and exhaust waste throughput. On testing the new system, it was proved that the actual operation of the unit was the same as that predicted in the model, proving the reliability and understanding of the technology. In the fall of 1999, whilst working with
Tokyo Electron Limited (TEL), there was a strong requirement for a smaller
system to be made to allow for easier mounting within equipment. As a result
of this, a size specification was developed which led to the design of the
Model 2DH DryScrub System. The 2DH model has a chamber diameter of 295mm that
allows more versatile installation where space may be limited. The chamber
volume was reduced to a half that of the 2D System but because of the novel
design of the electrode, the collection capacity of the electrode was only
reduced by 25%, also the new design increased the performance capabilities
over that of the 2D system. New patent applications have been filed for this
innovative design. The 2DH model was a very successful
product and immediately gain the recognitions by the industry. Several DRAM
companies such as Samsung, Elpida and Micron all took the many advantages of
the 2DH model, such as reduced process system maintenance, reduced vacuum
components failures, and reduced wafer particle counts by installing many
DryScrub systems. Many new applications are now also used the 2DH model as a
standard components in the exhaust line to reduce particle counts, protect
vacuum components, and for PFC abatement. In 2003, when DryScrub, ETC is dedicated to the development and application of their plasma technology to the semiconductor processing and allied industries. As a result of this, DryScrub, ETC LEADS the field in the plasma treatment of exhaust gasses. DryScrub, ETC is a technology driven company and has continued to serve its Customers, assisting them with in developing both existing and new applications for the DryScrub System. The DryScrub has implications for Process, Maintenance, Safety and the Environment with the associated benefits of reduced wafer production costs. As production requirements change, so the
DryScrub technology will be adapted and improved, enabling DryScrub, ETC to
continue meeting it's Customers demands and expectations. |
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